Product Details Portlet

G3VM-66M MOS FET Relay Module

MOS FET Relay in module package with SPDT (1C)

  • This model of operated by voltage (Rated input voltage is 5 VDC.)
  • Contribute to reduce the mounting space on the print circuit board by small package
  • Contact form 1c (SPDT)
  • Load Voltage 60 V
  • Surface-mounting
RoHS適合
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ConstructionRated input voltageLoad voltage
(peak value)		Continuous load current
(peak value)		MODELMinimum
package
quantity
Enclosure ratingContact formVccVCBITTa=25°CTa=80°C
Fully Sealed1c (SPDT)5 VDC5 VDC60 V400 mA130 mAG3VM-66M

50 pcs/tube

Absolute Maximum Ratings (Ta = 25ºC)
ItemSymbolRatingUnitMeasurement Conditions
InputRated input voltageVCCMIN4.8VIo (peak)=400 mA
MAX5.2V
VCBITMIN4.5V
MAX5.5V
OutputLoad voltageVoff (rms)36VVcc=5 V, Io (peak)=400 mA
Load voltage (peak value)Voff (peak)60VVcc=5 V
Continuous load current (peak value)Io (peak)400mAVcc=5 V
Inrush currentIINRUSH1,200mAVcc=5 V (1 cycle, 50 Hz/60 Hz)
Dielectric strength between I/OVi-o

300

Vrms

50/60 Hz , 1 min
Ambient storage temperatureTstg-30 to 100°CWith no icing condensation
Ambient operating temperatureTa-30 to 80°CWith no icing condensation
Ambient operating humidity45 to 85%

Electrical Characteristics (Ta = 25ºC)
ItemSymbolMinimumTypicalMaximumUnitMeasurement Conditions
InputInput currentIINPUT-7.315mAVcc=5 V
OutputMaximum resistance with output ONRON-11.5ΩVcc=5 V, Io (peak)=400 mA,
Voff (rms)=36 V
Current leakageILEAK----

See engineering data on page 2 of G3VM-66M data sheet

Capacitance between output terminalsCOFF-20-pFVs=0 V, f=100 MHz, t<1 s
Capacitance between I/O terminalsCI-O-3.5-pFVs=0 V, f=1 MHz
Insulation resistanceRI-O500--MΩVI-O=500 VDC
Operate timetON-0.31msVcc=5 V, Io (peak)=400 mA,
Voff (rms)=36 V
Release timetOFF-0.11ms
Appearance
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Terminal Arrangement/Internal Connections (Top View)
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(Unit: mm)
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Actual Mounting Pad Dimensions
(Recommended Value, Top View)
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